A new topological insulator built from quasi one‐dimensional atomic ribbons. Issue 2 (18th December 2014)

• Record Type: Journal Article
• Authors: Schönherr, Piet; Zhang, Shilei; Liu, Yuanqian; Kusch, Patryk; Reich, Stephanie; Giles, Terence; Daisenberger, Dominik; Prabhakaran, Dharmalingam; Chen, Yulin; Hesjedal, Thorsten
• Is Part Of: Physica status solidi. Volume 9:Issue 2(2015:Feb.)
• Page Start: 130
• Page End: 135
• Publication Date: 2014-12-18
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409518
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201409518-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one‐dimensional, conducting atomic chains instead of the layered, two‐dimensional sheets known from the established Bi₂(Se, Te)₃ system. The Sb‐doped Bi₂Se₃ nanowires are grown in a TiO₂‐catalyzed process by chemical vapor deposition. The binary Bi₂Se₃ is transformed from rhombohedral to orthorhombic by substituting Sb on ∼38% of the Bi sites. Pure Sb₂Se₃ is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle‐resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap. (© 2015 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>