Cite
HARVARD Citation
Jia, Z. et al. (n.d.). A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel. Chinese physics letters. pp. 028501-. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Jia, Z. et al. (n.d.). A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel. Chinese physics letters. pp. 028501-. [Online].