Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers. Issue 12 (11th February 2015)

Record Type:: Journal Article
Title:: Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers. Issue 12 (11th February 2015)
Main Title:: Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers
Authors:: Her, Jim-Long
Chen, Fa-Hsyang
Chen, Ching-Hung
Pan, Tung-Ming
Abstract:: <abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgh3qrh4d74" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />In this study, we report the structural and electrical characteristics of high-<italic>κ</italic> Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications. </abstract>
Is Part Of:: RSC advances. Volume 5:Issue 12(2015)
Journal:: RSC advances
Issue:: Volume 5:Issue 12(2015)
Issue Display:: Volume 5, Issue 12 (2015)
Year:: 2015
Volume:: 5
Issue:: 12
Issue Sort Value:: 2015-0005-0012-0000
Page Start:: 8566
Page End:: 8570
Publication Date:: 2015-02-11
Subjects:: Chemistry -- Periodicals
540.5
Journal URLs:: http://pubs.rsc.org/en/Journals/JournalIssues/RA ↗
http://www.rsc.org/ ↗
DOI:: 10.1039/c4ra15538f ↗
Languages:: English
ISSNs:: 2046-2069
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - 8036.750300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store
Ingest File:: 3322.xml