High‐Performance and Environmentally Stable Planar Heterojunction Perovskite Solar Cells Based on a Solution‐Processed Copper‐Doped Nickel Oxide Hole‐Transporting Layer. (29th November 2014)

• Record Type: Journal Article
• Authors: Kim, Jong H.; Liang, Po‐Wei; Williams, Spencer T.; Cho, Namchul; Chueh, Chu‐Chen; Glaz, Micah S.; Ginger, David S.; Jen, Alex K.‐Y.
• Is Part Of: Advanced materials. Volume 27:Number 4(2014)
• Page Start: 695
• Page End: 701
• Publication Date: 2014-11-29
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201404189
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201404189-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>An effective approach</bold> to significantly increase the electrical conductivity of a NiO<italic>_x</italic> hole‐transporting layer (HTL) to achieve high‐efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu‐doped NiO<italic>_x</italic> HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu‐doped NiO<italic>_x</italic> to larger bandgap perovskites is also demonstrated in this study. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh3jjkrs4c" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>