Unconventional digital computing approach: memristive nanodevice platform. Issue 1 (20th November 2014)

• Record Type: Journal Article
• Authors: Shahsavari, Mahyar; Faisal Nadeem, M.; Arash Ostadzadeh, S.; Devienne, Philippe; Boulet, Pierre
• Is Part Of: Physica status solidi. Volume 12:Issue 1/2(2015)
• Page Start: 222
• Page End: 228
• Publication Date: 2014-11-20
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400069
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Memristor is a two‐terminal nanodevice that has recently attracted the attention of many researchers. Its simple structure, non‐volatility behavior, high‐density integration, and low‐power consumption make the memristor a promising candidate to act as a switch in digital gates for future high‐performance and low‐power nanocomputing applications. In this paper, we model the behavior of memristor by using Verilog‐A. To investigate its characteristics in a circuit, we use the HSPICE simulator.</p> <p>Furthermore, a library of digital gates are provided by using two approaches to make digital gates: the first one is based on material implication (IMP) and the second one is based on crossbar arrays. Finally, we perform a comparison and evaluation between the two methods. (© 2015 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>