Light‐induced degradation of PECVD aluminium oxide passivated silicon solar cells. Issue 1 (5th December 2014)

• Record Type: Journal Article
• Authors: Fertig, Fabian; Krauß, Karin; Rein, Stefan
• Is Part Of: Physica status solidi. Volume 9:Issue 1(2015:Jan.)
• Page Start: 41
• Page End: 46
• Publication Date: 2014-12-05
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409424
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201409424-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Light‐induced degradation (LID) has been identified to be a critical issue for solar cells processed on boron‐doped silicon substrates. Typically, Czochralski‐grown silicon (Cz‐Si) has been reported to suffer from stronger LID than block‐cast multicrystalline silicon (mc‐Si) due to higher oxygen concentrations. This work investigates LID under conditions practically relevant under module operation on different cell types. It is shown that aluminium oxide (AlOx) passivated mc‐Si solar cells degrade more than a reference aluminium back surface field mc‐Si cell and, remarkably, an AlOx passivated Cz‐Si solar cell. The defect which is activated by illumination is shown to be doubtful a sole bulk effect while the AlOx passivation might play a certain role. This work may contribute to a re‐evaluation of the suitability of boron‐doped Cz‐ and mc‐Si for solar cells with very high efficiencies. (© 2015 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>