Ultra high amorphous silicon passivation quality of crystalline silicon surface using in‐situ post‐deposition treatments. Issue 1 (5th December 2014)

• Record Type: Journal Article
• Authors: Meddeb, H.; Bearda, Twan; Dimassi, Wissem; Abdulraheem, Yaser; Ezzaouia, Hatem; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef
• Is Part Of: Physica status solidi. Volume 9:Issue 1(2015:Jan.)
• Page Start: 53
• Page End: 56
• Publication Date: 2014-12-05
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409494
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201409494-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>A parametric study of post‐deposition hydrogen plasma treatment of intrinsic a:Si:H films is performed. We demonstrate a significant improvement in passivation of c‐Si(100) promoting epitaxy after an in‐situ hydrogen plasma treatment depending mainly on the pressure and slightly on the power. Plasma diagnostic indicates an increase of H_α* signal with high power and low pressure. However, our analysis reveals a better hydrogen incorporation with high pressure and a slight increase in monohydride with high power. Longer H₂ plasma duration up to 50 s shows no detrimental effect on the passivation quality. Optimizing the in‐situ H₂ plasma treatment, high minority carrier lifetime over 15 ms was achieved after short thermal annealing. (© 2015 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>