A compact 2D potential model for subthreshold characterization of nanoscale fully depleted short channel nanowire MOSFETs. (5th May 2014)

• Record Type: Journal Article
• Authors: Xi, Liu; Xiao‐Shi, Jin; Chuai, Rongyan; Jong‐Ho, Lee
• Is Part Of: International journal of numerical modelling. Volume 28:Number 2(2015:Mar./Apr.)
• Page Start: 222
• Page End: 230
• Publication Date: 2014-05-05
• Subjects: Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2001
• Languages: English
• ISSNs: 0894-3370

Abstract

<abstract abstract-type="main"> <title>Summary</title> <p>In this work, a compact subthreshold model for fully depleted nanoscale short channel nanowire MOSFETs is proposed. It is based on an approximated solution of two‐dimensional Poisson's Equation in cylindrical coordinate system. It matches well with technology computer‐aided design simulation results in a wide range variation of design parameters without introducing any empirical fitting parameters. Copyright © 2014 John Wiley &amp; Sons, Ltd.</p> </abstract>