An Insight into Grain Refinement Mechanism of Ultrananocrystalline Diamond Films Obtained by Direct Current Plasma‐Assisted Chemical Vapor Deposition. Issue 5 (3rd March 2014)

• Record Type: Journal Article
• Authors: Lee, Hak‐Joo; Cho, Jung‐Min; Kim, Inho; Lee, Seung‐Cheol; Park, Jong‐Keuk; Baik, Young‐Joon; Lee, Wook‐Seong
• Is Part Of: Plasma processes and polymers. Volume 11:Issue 5(2014:May)
• Page Start: 437
• Page End: 447
• Publication Date: 2014-03-03
• Subjects: Plasma polymerization -- Periodicals; Plasma-enhanced chemical vapor deposition -- Periodicals; Plasma chemistry -- Periodicals
• DOI: 10.1002/ppap.201300146
• Languages: English
• ISSNs: 1612-8850

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="ppap201300146-sec-0001" sec-type="section"> <p>The grain‐refinement mechanisms involved during the deposition of diamond films by direct‐current plasma assisted chemical vapor deposition (DC‐PACVD) were investigated as a function of the inter‐electrode electric field (IEEF). As IEEF was increased from 260 to 940 V cm⁻¹, the local electron temperatures near the growth front increased strongly; as a result, a strong grain refinement occurred ultimately yielding ultrananocrystalline diamond films (UNCD). Such observations were attributed to novel features of the DC‐PACVD, including the electron‐stimulated desorption (ESD) of the hydrogen‐terminated moieties located at the surface, and the consequently enhanced generation of bi‐radical sites at the growing diamond surface.<inline-graphic xlink:href="ark:/27927/pgg5nqc4ftf" content-type="ppap201300146-gra-0001" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></p> </sec> </abstract>