Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (Adv. Mater. 17/2014). (May 2014)

• Record Type: Journal Article
• Authors: Feng, Qingliang; Zhu, Yiming; Hong, Jinhua; Zhang, Mei; Duan, Wenjie; Mao, Nannan; Wu, Juanxia; Xu, Hua; Dong, Fengliang; Lin, Fang; Jin, Chuanhong; Wang, Chunming; Zhang, Jin; Xie, Liming
• Is Part Of: Advanced materials. Volume 26:Number 17(2014)
• Page Start: 2763
• Page End: 2763
• Publication Date: 2014-05
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201470114
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201470114-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Alloying in monolayers enables bandgap tuning in twodimensions. On page 2648, L. Xie, J. Zhang, and co‐workers demonstrate that by direct evaporation of two end materials (MoS₂ and MoSe₂) and deposition at low temperatures, large‐area 2D MoS_2(1−x)Se_2x monolayers are obtained. By changing the S/Se composition, the bandgap of MoS_2(1−x)Se_2x monolayers can be continuously tuned. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg5nnfxt48" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>