Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices. (6th April 2014)

• Record Type: Journal Article
• Authors: Herpers, Anja; Lenser, Christian; Park, Chanwoo; Offi, Francesco; Borgatti, Francesco; Panaccione, Giancarlo; Menzel, Stephan; Waser, Rainer; Dittmann, Regina
• Is Part Of: Advanced materials. Volume 26:Number 17(2014)
• Page Start: 2730
• Page End: 2735
• Publication Date: 2014-04-06
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201304054
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201304054-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>By using hard X‐ray photoelectron spectroscopy experimentally</bold>, proof is provided that resistive switching in Ti/Pr_0.48Ca_0.52MnO₃ (PCMO) devices is based on a redox‐process that mainly occurs on the Ti‐side. The different resistance states are determined by the amount of fully oxidized Ti‐ions in the stack, implying a reversible redox‐reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg5nnfxsrp" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>