Upgraded Silicon Nanowires by Metal‐Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar‐Grade Silicon. (2nd May 2013)

• Record Type: Journal Article
• Authors: Li, Xiaopeng; Xiao, Yanjun; Bang, Jin Ho; Lausch, Dominik; Meyer, Sylke; Miclea, Paul‐Tiberiu; Jung, Jin‐Young; Schweizer, Stefan L.; Lee, Jung‐Ho; Wehrspohn, Ralf B.
• Is Part Of: Advanced materials. Volume 25:Number 23(2013)
• Page Start: 3187
• Page End: 3191
• Publication Date: 2013-05-02
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201300973
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Through metal‐assisted chemical etching (MaCE), superior purification of dirty Si is observed</bold>, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg21kpzdn8" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>