A Platform for Large‐Scale Graphene Electronics – CVD Growth of Single‐Layer Graphene on CVD‐Grown Hexagonal Boron Nitride. (10th April 2013)

• Record Type: Journal Article
• Authors: Wang, Min; Jang, Sung Kyu; Jang, Won‐Jun; Kim, Minwoo; Park, Seong‐Yong; Kim, Sang‐Woo; Kahng, Se‐Jong; Choi, Jae‐Young; Ruoff, Rodney S.; Song, Young Jae; Lee, Sungjoo
• Is Part Of: Advanced materials. Volume 25:Number 19(2013)
• Page Start: 2746
• Page End: 2752
• Publication Date: 2013-04-10
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201204904
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Direct chemical vapor deposition (CVD) growth of single‐layer graphene</bold> on CVD‐grown hexagonal boron nitride (h‐BN) film can suggest a large‐scale and high‐quality graphene/h‐BN film hybrid structure with a defect‐free interface. This sequentially grown graphene/h‐BN film shows better electronic properties than that of graphene/SiO₂ or graphene transferred on h‐BN film, and suggests a new promising template for graphene device fabrication. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1zsnm1v0" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>