Electrolyte‐Gated SmCoO3 Thin‐Film Transistors Exhibiting Thickness‐Dependent Large Switching Ratio at Room Temperature. (5th February 2013)

• Record Type: Journal Article
• Authors: Xiang, Ping‐Hua; Asanuma, Shutaro; Yamada, Hiroyuki; Sato, Hiroshi; Inoue, Isao H.; Akoh, Hiroshi; Sawa, Akihito; Kawasaki, Masashi; Iwasa, Yoshihiro
• Is Part Of: Advanced materials. Volume 25:Number 15(2013)
• Page Start: 2158
• Page End: 2161
• Publication Date: 2013-02-05
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201204505
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A Mott transistor that exhibits a large switching ratio of more than two orders at room temperature</bold> is demonstrated by using the electric double layer of an ionic liquid for gating on a strongly correlated electron system SmCoO₃. From the thickness dependence of the on‐state channel current, we estimate the screening length of the SmCoO₃ to be ∼5 nm. The good carrier confinement within the Thomas‐Fermi screening length demonstrates that the SmCoO₃‐channel electric double layer transistor is the first candidate for a two‐dimensional Mott transistor. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1xppb5qt" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>