Large Resistive Switching in Ferroelectric BiFeO3 Nano‐Island Based Switchable Diodes. (28th February 2013)

• Record Type: Journal Article
• Authors: Hong, Sahwan; Choi, Taekjib; Jeon, Ji Hoon; Kim, Yunseok; Lee, Hosang; Joo, Ho‐Young; Hwang, Inrok; Kim, Jin‐Soo; Kang, Sung‐Oong; Kalinin, Sergei V.; Park, Bae Ho
• Is Part Of: Advanced materials. Volume 25:Number 16(2013)
• Page Start: 2339
• Page End: 2343
• Publication Date: 2013-02-28
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201204839
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Comparison between piezoelectric force microscopy images and current‐voltage data</bold> consecutively obtained using conductive atomic force microscopy below transition voltages for a highly oriented ferroelectric BiFeO₃ nano‐island confirms that ferroelectric polarization reversal induces transitions of forward‐direction, and thus down‐ and up‐polarization is accompanied by positive‐ and negative‐forward diode‐like behavior, respectively. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1zs0k1zn" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>