Electric‐Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling. (1st November 2012)

• Record Type: Journal Article
• Authors: Castellanos‐Gomez, Andres; Cappelluti, Emmanuele; Roldán, Rafael; Agraït, Nicolás; Guinea, Francisco; Rubio‐Bollinger, Gabino
• Is Part Of: Advanced materials. Volume 25:Number 6(2013)
• Page Start: 899
• Page End: 903
• Publication Date: 2012-11-01
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201203731
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The electrostatic screening in single and few‐layer MoS₂ sheets is studied. Electrostatic force microscopy is used to probe the electric field generated by charge impurities in the substrate and incompletely screened by MoS₂ sheets. A non‐linear Thomas–Fermi theory is employed to interpret the experimental results, demonstrating the important role of the interlayer coupling in the screening of MoS₂. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgg1ts4cbnq" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>