Graphene: Metal‐Etching‐Free Direct Delamination and Transfer of Single‐Layer Graphene with a High Degree of Freedom (Small 2/2015). Issue 2 (January 2015)

• Record Type: Journal Article
• Authors: Yang, Sang Yoon; Oh, Joong Gun; Jung, Dae Yool; Choi, HongKyw; Yu, Chan Hak; Shin, Jongwoo; Choi, Choon‐Gi; Cho, Byung Jin; Choi, Sung‐Yool
• Is Part Of: Small. Volume 11:Issue 2(2015)
• Page Start: 145
• Page End: 145
• Publication Date: 2015-01
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201570008
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="smll201570008-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>A novel transfer process with an elastomeric stamp is described on page 175 by S.‐Y. Choi and co‐workers. It includes the metal‐etching free, direct delamination of graphene from a copper growth substrate and transfer to a flexible substrate. The capabilities of the developed transfer process, such as large‐area transfer onto a flexible substrate, multi‐layer stacking of graphene, and transfer onto a structured electrode surface are demonstrated. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh31q0r9rt" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>