Cite
HARVARD Citation
Deng, Y. et al. (2014). A surface‐potential‐based model for silicon nanowire junctionless field‐effect transistors including interface traps. International journal of numerical modelling. pp. 896-907. [Online].
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Deng, Y. et al. (2014). A surface‐potential‐based model for silicon nanowire junctionless field‐effect transistors including interface traps. International journal of numerical modelling. pp. 896-907. [Online].