Study of the Origin of Major Donor States in Oxide Semiconductor. Issue 1 (June 2014)
- Record Type:
- Journal Article
- Title:
- Study of the Origin of Major Donor States in Oxide Semiconductor. Issue 1 (June 2014)
- Main Title:
- Study of the Origin of Major Donor States in Oxide Semiconductor
- Authors:
- Oota, Masashi
Ishihara, Noritaka
Nakashima, Motoki
Kurosawa, Yoichi
Hirohashi, Takuya
Takahashi, Masahiro
Yamazaki, Shunpei
Obonai, Toshimitsu
Hosaka, Yasuharu
Koezuka, Junichi
Kanzaki, Yohsuke
Matsukizono, Hiroshi
Kaneko, Seiji
Matsuo, Takuya - Abstract:
- <abstract abstract-type="main"> <title>Abstract</title> <p>The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.</p> </abstract>
- Is Part Of:
- Digest of technical papers. Volume 45:Issue 1(2014)
- Journal:
- Digest of technical papers
- Issue:
- Volume 45:Issue 1(2014)
- Issue Display:
- Volume 45, Issue 1 (2014)
- Year:
- 2014
- Volume:
- 45
- Issue:
- 1
- Issue Sort Value:
- 2014-0045-0001-0000
- Page Start:
- 975
- Page End:
- 978
- Publication Date:
- 2014-06
- Subjects:
- Information display systems -- Congresses
621.3815422 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/j.2168-0159.2014.tb00253.x ↗
- Languages:
- English
- ISSNs:
- 0097-966X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 3831.xml