A New Process and Structure for Oxide Semiconductor LCDs. Issue 1 (June 2014)

• Record Type: Journal Article
• Authors: Yang, Joon‐Young; Lee, Sul; Cho, Seong‐Joon; Jun, Myung‐Chul; Kang, In‐Byeong; Yeo, Sang Deog; Park, Jung‐Ho
• Is Part Of: Digest of technical papers. Volume 45:Issue 1(2014)
• Page Start: 469
• Page End: 472
• Publication Date: 2014-06
• Subjects: Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/j.2168-0159.2014.tb00122.x
• Languages: English
• ISSNs: 0097-966X

Abstract

<abstract abstract-type="main"> <title>Abstract</title> <p>A coplanar TFT structure has excellent characteristics in Δ Vp and channel length compared to conventional etch stopper TFT structure in AOS TFT LCD. In this paper, we introduce new 5 mask coplanar structure which reduces two mask steps compared to conventional 7 mask process. And we fabricated 4.5‐inch HD resolution panel in our R&amp;D line with our new structure, and its transmittance is 12.5% improved by eliminating contact hole pattern.</p> </abstract>