Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring. Issue 1 (June 2014)

• Record Type: Journal Article
• Authors: Akimoto, Kengo; Shima, Yukinori; Jincho, Masami; Nakazawa, Yasutaka; Okazaki, Kenichi; Koezuka, Junichi; Ohta, Masashi; Ishihara, Noritaka; Nakashima, Motoki; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei
• Is Part Of: Digest of technical papers. Volume 45:Issue 1(2014)
• Page Start: 465
• Page End: 468
• Publication Date: 2014-06
• Subjects: Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/j.2168-0159.2014.tb00121.x
• Languages: English
• ISSNs: 0097-966X

Abstract

<abstract abstract-type="main"> <title>Abstract</title> <p>A channel‐etched IGZO field‐effect transistor (FET) using Cu wiring was fabricated. Because little Cu is diffused into a c‐axis aligned crystalline oxide semiconductor (CAAC‐OS), which is c‐axis aligned crystalline IGZO, the use of the CAAC‐OS provides favorable characteristics for a channel‐etched FET.</p> </abstract>