Invited Paper: Solution Processed Single‐Grain Si TFTs on a Plastic Substrate. Issue 1 (June 2014) - Ishihara, Ryoichi
Abstract High‐mobility single‐grain Si TFTs have been successfully fabricated on a polyimide‐coated substrate with solution process of Si. After doctor‐blade coating of cyclopentasilane (CPS), a‐Si:H was obtained at a temperature below 350°C. With dehydrogenation and crystallization by excimer laser, grains with a maximum diameter of 3 μm were obtained at predetermined positions. Single‐grain Si TFTs showed mobilities of 460cm2/Vs and 121cm2/Vs for electrons and holes, respectively. The devices were transferred onto a PEN foil and operated under a bending diameter as small as 6 mm. The results suggest the proposed technology to be attractive for various innovative applications, not only for driver‐integrated flexible displays, but also for ultra‐high‐frequency RF‐ID tag, highly‐sensitive bio‐medical sensors and eventually for integrated smart‐systems on a plastic.