Electrodeposition of Crystalline Gallium‐Doped Germanium and SixGe1−x from an Ionic Liquid at Room Temperature. Issue 4 (29th January 2015)

• Record Type: Journal Article
• Authors: Lahiri, Abhishek; Olschewski, Mark; Carstens, Timo; El Abedin, Sherif Zein; Endres, Frank
• Is Part Of: ChemElectroChem. Volume 2:Issue 4(2015)
• Page Start: 571
• Page End: 577
• Publication Date: 2015-01-29
• Subjects: Electrochemistry -- Periodicals; 541.37
• DOI: 10.1002/celc.201402374
• Languages: English
• ISSNs: 2196-0216

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>In this paper, we show the electrodeposition of both gallium‐doped crystalline germanium and Si_{<italic>x</italic>}Ge_{1−<italic>x</italic>} directly on copper at room temperature from an ionic liquid. Germanium and Si_{<italic>x</italic>}Ge_{1−<italic>x</italic>} were electrodeposited on a thin layer of electrodeposited gallium on copper, thereby leading to the formation of crystalline gallium‐doped germanium and Si_{<italic>x</italic>}Ge_{1−<italic>x</italic>}. From the microstructure, it appears that Ge and Si_{<italic>x</italic>}Ge_{1−<italic>x</italic>} dissolve in Ga to form an amalgam, which then recrystallises to form a crystalline structure. X‐ray diffraction confirmed the formation of crystalline phases. The indirect band gap of the gallium‐doped germanium measured by using scanning tunnelling spectroscopy is (0.9±0.1) eV.</p> </abstract>