Pn‐Heterojunction Diodes with n‐Type In2O3. (16th March 2015)

• Record Type: Journal Article
• Authors: von Wenckstern, Holger; Splith, Daniel; Lanzinger, Stefan; Schmidt, Florian; Müller, Stefan; Schlupp, Peter; Karsthof, Robert; Grundmann, Marius
• Is Part Of: Advanced Electronic Materials. Volume 1:Number 4(2015:Apr.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-03-16
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201400026
• Languages: English
• ISSNs: 2199-160X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>pn‐Heterodiodes comprising the wide bandgap semiconducting oxide In₂O₃ and amorphous p‐conducting NiO or ZnCo₂O₄ are realized. In₂O₃ is grown at 600 °C and the amorphous p‐type oxides at room temperature by pulsed‐laser deposition. Highest rectification of about four orders of magnitude is observed for structures with Mg‐doped In₂O₃ layers having lower carrier density than undoped layers. The p‐ZnCo₂O₄/n‐In₂O₃ diodes do not show degradation at elevated temperatures of 150 °C, whereas the p‐NiO/n‐In₂O₃ diodes degrade irreversibly for <italic>T</italic> &gt; 100 °C. Thermal admittance spectroscopy revealed shallow defect levels in the In₂O₃ layer with activation energy of about 12 and 250 meV, respectively.</p> </abstract>