Ultra‐Flexible, "Invisible" Thin‐Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends. (25th February 2015)

• Record Type: Journal Article
• Authors: Yu, Xinge; Zeng, Li; Zhou, Nanjia; Guo, Peijun; Shi, Fengyuan; Buchholz, Donald B.; Ma, Q.; Yu, Junsheng; Dravid, Vinayak P.; Chang, Robert P. H.; Bedzyk, Michael; Marks, Tobin J.; Facchetti, Antonio
• Is Part Of: Advanced materials. Volume 27:Number 14(2015)
• Page Start: 2390
• Page End: 2399
• Publication Date: 2015-02-25
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201405400
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201405400-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Ultra‐flexible and transparent metal oxide transistors</bold> are developed by doping In₂O₃ films with poly(vinylphenole) (PVP). By adjusting the In₂O₃:PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In₂O₃:5%PVP‐based transistors exhibit mobilities approaching 11 cm² V⁻¹ s⁻¹ before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgjg4ptzjs" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>