Crystallization dynamics and interface stability of strontium titanate thin films on silicon. (1st April 2015)

• Record Type: Journal Article
• Authors: Hanzig, Florian; Hanzig, Juliane; Mehner, Erik; Richter, Carsten; Veselý, Jozef; Stöcker, Hartmut; Abendroth, Barbara; Motylenko, Mykhaylo; Klemm, Volker; Novikov, Dmitri; Meyer, Dirk C.
• Is Part Of: Journal of applied crystallography. Volume 48:Part 2(2015:Apr.)
• Page Start: 393
• Page End: 400
• Publication Date: 2015-04-01
• Subjects: Crystallography -- Periodicals; 548.05
• DOI: 10.1107/S160057671500240X
• Languages: English
• ISSNs: 0021-8898

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO₂ the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphous SrTiO₃ layers is investigated by <italic>in situ</italic> grazing‐incidence X‐ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO₃ layers were determined for temperatures up to 1223 K under atmospheric conditions applying different heating rates. At approximately 473 K, crystallization of perovskite‐type SrTiO₃ is initiated for Sr‐rich electron beam evaporated layers, whereas Sr‐depleted sputter‐deposited thin films crystallize at 739 K. During annealing, a significant diffusion of Si from the substrate into the SrTiO₃ layers occurs in the case of Sr‐rich composition. This leads to the formation of secondary silicate phases which are observed by X‐ray diffraction, transmission electron microscopy and X‐ray photoelectron spectroscopy.</p> </abstract>