Measurement of strain in InGaN/GaN nanowires and nanopyramids. (1st April 2015)
- Record Type:
- Journal Article
- Title:
- Measurement of strain in InGaN/GaN nanowires and nanopyramids. (1st April 2015)
- Main Title:
- Measurement of strain in InGaN/GaN nanowires and nanopyramids
- Authors:
- Stankevič, Tomaš
Mickevičius, Simas
Schou Nielsen, Mikkel
Kryliouk, Olga
Ciechonski, Rafal
Vescovi, Giuliano
Bi, Zhaoxia
Mikkelsen, Anders
Samuelson, Lars
Gundlach, Carsten
Feidenhans'l, Robert - Abstract:
- <abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The growth and optoelectronic properties of core–shell nanostructures are influenced by the strain induced by the lattice mismatch between core and shell. In contrast with planar films, nanostructures contain multiple facets that act as independent substrates for shell growth, which enables different relaxation mechanisms. In this study, X‐ray diffraction data are presented that show that In<sub>α</sub>Ga<sub>1−α</sub>N shells grown on GaN cores are strained along each of the facets independently. Reciprocal space maps reveal multiple Bragg peaks, corresponding to different parts of the shell being strained along the individual facet planes. The strained lattice constants were found from the positions of the Bragg peaks. Vegard's law and Hooke's law for an anisotropic medium were applied in order to find the composition and strain in the InGaN shells. A range of nanowire samples with different InGaN shell thicknesses were measured and it is concluded that, with an In concentration of around 30%, major strain relaxation takes place when the thickness reaches 23 nm. InGaN shells of 6 and 9 nm thickness remain nearly fully strained biaxially along each of the <inline-graphic xlink:href="ark:/27927/pgjdnd8b0b" mimetype="image" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> facets of the nanowires and the <inline-graphic xlink:href="ark:/27927/pgjdnd8b1v"<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The growth and optoelectronic properties of core–shell nanostructures are influenced by the strain induced by the lattice mismatch between core and shell. In contrast with planar films, nanostructures contain multiple facets that act as independent substrates for shell growth, which enables different relaxation mechanisms. In this study, X‐ray diffraction data are presented that show that In<sub>α</sub>Ga<sub>1−α</sub>N shells grown on GaN cores are strained along each of the facets independently. Reciprocal space maps reveal multiple Bragg peaks, corresponding to different parts of the shell being strained along the individual facet planes. The strained lattice constants were found from the positions of the Bragg peaks. Vegard's law and Hooke's law for an anisotropic medium were applied in order to find the composition and strain in the InGaN shells. A range of nanowire samples with different InGaN shell thicknesses were measured and it is concluded that, with an In concentration of around 30%, major strain relaxation takes place when the thickness reaches 23 nm. InGaN shells of 6 and 9 nm thickness remain nearly fully strained biaxially along each of the <inline-graphic xlink:href="ark:/27927/pgjdnd8b0b" mimetype="image" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> facets of the nanowires and the <inline-graphic xlink:href="ark:/27927/pgjdnd8b1v" mimetype="image" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> facets of the nanopyramids.</p> </abstract> … (more)
- Is Part Of:
- Journal of applied crystallography. Volume 48:Part 2(2015:Apr.)
- Journal:
- Journal of applied crystallography
- Issue:
- Volume 48:Part 2(2015:Apr.)
- Issue Display:
- Volume 48, Issue 2, Part 2 (2015)
- Year:
- 2015
- Volume:
- 48
- Issue:
- 2
- Part:
- 2
- Issue Sort Value:
- 2015-0048-0002-0002
- Page Start:
- 344
- Page End:
- 349
- Publication Date:
- 2015-04-01
- Subjects:
- Crystallography -- Periodicals
548.05 - Journal URLs:
- http://firstsearch.oclc.org ↗
http://journals.iucr.org/j/journalhomepage.html ↗
http://www-us.ebsco.com/online/direct.asp?JournalID=105188 ↗
http://www.blackwell-synergy.com/loi/jcr ↗
http://www.blackwell-synergy.com/servlet/useragent?func=showIssues&code=jcr&open=2004#C2004 ↗
http://onlinelibrary.wiley.com/journal/10.1107/S16005767 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1107/S1600576715000965 ↗
- Languages:
- English
- ISSNs:
- 0021-8898
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 4942.400000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 3014.xml