Fast growth of thin multi‐crystalline silicon ribbons by the RST method. Issue 1 (13th October 2014)

• Record Type: Journal Article
• Authors: Heilbronn, Bertrand; De Moro, Fabrice; Jolivet, Emilie; Tupin, Elsa; Chau, Benjamin; Varrot, Romain; Drevet, Béatrice; Bailly, Séverine; Rey, Delphine; Lignier, Hélène; Xi, Yinghao; Riberi‐Béridot, Thècle; Mangelinck‐Noël, Nathalie; Reinhart, Guillaume; Regula, Gabrielle
• Is Part Of: Crystal research and technology. Volume 50:Issue 1(2015:Jan.)
• Page Start: 101
• Page End: 114
• Publication Date: 2014-10-13
• Subjects: Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.201400213
• Languages: English
• ISSNs: 0232-1300

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="crat201400213-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The RST process is a ribbon direct‐wafering technology with specific ability for thin multi‐crystalline wafer production. Efficiency over 16% has been reached. Impurities, such as C and transition metals, need to be eliminated in the process. A model is proposed which shows that the carbon substrate is an important source of carbon contamination in the silicon melt. Experimental segregation studies conclude to a near‐diffusive regime. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh372mhtd5" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>