InGaN/GaN dot‐in‐a‐wire: ultimate terahertz nanostructure. Issue 1 (2nd January 2015)

• Record Type: Journal Article
• Authors: Sun, Guan; Chen, Ruolin; Ding, Yujie J.; Nguyen, Hieu P. T.; Mi, Zetian
• Is Part Of: Laser & photonics reviews. Volume 9:Issue 1(2015:Jan.)
• Page Start: 105
• Page End: 113
• Publication Date: 2015-01-02
• Subjects: Lasers -- Periodicals; Photonics -- Periodicals; Lasers -- Périodiques; Photonique -- Périodiques; 621.36
• DOI: 10.1002/lpor.201400138
• Languages: English
• ISSNs: 1863-8880

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="lpor201400138-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Terahertz radiation from nitride‐based dot‐in‐a‐wire nanostructures is investigated. Sub‐micro‐watt terahertz signal is generated with just ten vertically‐stacked quantum dots in each nanowire. A single quantum wire is capable of generating 10 pW, corresponding to 1 pW per dot. By applying a reverse bias along the wires in a light emitting device consisting of such nanostructures, the THz output power is increased more than fourfold. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh372w4p85" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>