Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC + TCNQ/p‐Si Structures. Issue 1 (20th June 2014)

• Record Type: Journal Article
• Authors: Kaya, A.; Demirezen, S.; Tecimer, H.; Altindal, Ş.
• Is Part Of: Advances in polymer technology. Volume 33:Issue 1(2014:Spring)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2014-06-20
• Subjects: Plastics -- Periodicals; Polymers -- Periodicals; 668.9
• DOI: 10.1002/adv.21442
• Languages: English
• ISSNs: 0730-6679

Abstract

<abstract abstract-type="main"> <title>Abstract</title> <p>The forward bias current conduction mechanisms of Au/PVC + TCNQ/p‐Si structures have been investigated in a wide temperature range of 120–420 K for various applied bias voltage. The analysis of the main electrical parameters such as zero‐bias barrier height (BH) (Φ<sub>Bo</sub>), ideality factor (<italic>n</italic>), and interface states (<italic>N</italic><sub>ss</sub>) was found strongly dependent on temperature and voltage. The obtained results show that, while Φ<sub>Bo</sub> increases, <italic>n</italic> decreases with increasing temperature. The plot of Φ<sub>app</sub> versus <italic>q</italic>/2<italic>kT</italic> was drawn to show a Gaussian distribution (GD) of the BHs, and this plot shows two distinct linear regions. The Φ<sub>Bo</sub> and standard deviation (<italic>σ<sub>s</sub></italic>) values were found from the slope and intercept of these plots for two regions as 1.16 eV and 0.161 V for the first region and 0.71 eV and 0.093 V for the second region, respectively. Such behavior is typical of a double GD (DGD) of the BHs due to the BH inhomogeneities at the metal–semiconductor interface. The slope and intercept of the modified (ln<italic>(I</italic><sub>0</sub><italic>/T</italic><sup>2</sup><italic>) – q</italic><sup>2</sup>σ<sub>0</sub><sup>2</sup>/2<italic>k</italic><sup>2</sup><italic>T</italic><sup>2</sup><italic>)</italic> versus <italic>q</italic>/<italic>kT</italic> plot gives the and ¯Φ<sub>Bo</sub> and effective Richardson constant (<italic>A</italic>*) as 1.16 and 0.76 eV and 36.7 and 83.8 A/cm<sup>2</sup>K<sup>2</sup>, respectively. The value of the <italic>A</italic>* (36.7 A/cm<sup>2</sup> K<sup>2</sup>) is very close to the theoretical value of 32 A/cm<sup>2</sup> K<sup>2</sup> for p‐Si. In addition, to interrupt the voltage‐dependent activation energy, the ln(<italic>I<sub>s</sub></italic>/<italic>T</italic><sup>2</sup>) versus <italic>q</italic>/<italic>kT</italic> plot was drawn in the voltage range of 0–0.3 V in 0.05 V steps. All of experimental results confirmed that the BH or <italic>E<sub>a</sub></italic> values depend on the temperature as well as bias voltages.</p> </abstract>