Mapping Charge‐Carrier Density Across the p–n Junction in Ambipolar Carbon‐Nanotube Networks by Raman Microscopy. (22nd October 2014)

• Record Type: Journal Article
• Authors: Grimm, Stefan B.; Jakubka, Florian; Schießl, Stefan P.; Gannott, Florentina; Zaumseil, Jana
• Is Part Of: Advanced materials. Volume 26:Number 47(2014)
• Page Start: 7986
• Page End: 7992
• Publication Date: 2014-10-22
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201403655
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201403655-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>In situ confocal Raman microscopy</bold> is used to map the recombination zone (induced p–n junction) in an ambipolar carbon‐nanotube‐network transistor with high spatial resolution. The shift of the 2D mode (G' mode) depending on hole and electron accumulation serves as a measure for the local charge‐carrier density and provides complementary information about charge transport and recombination in ambipolar transistors. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2sx11hjd" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>