Perovskites: A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction (Adv. Mater. 48/2014). (December 2014)

• Record Type: Journal Article
• Authors: Ovsyannikov, Sergey V.; Karkin, Alexander E.; Morozova, Natalia V.; Shchennikov, Vladimir V.; Bykova, Elena; Abakumov, Artem M.; Tsirlin, Alexander A.; Glazyrin, Konstantin V.; Dubrovinsky, Leonid
• Is Part Of: Advanced materials. Volume 26:Number 48(2014)
• Page Start: 8184
• Page End: 8184
• Publication Date: 2014-12
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201470327
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201470327-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Perovskite‐type Mn₂O₃ described by S. V. Ovsyannikov and co‐workers on page 8185, is a unique, hard semiconductor having a narrow and direct bandgap of 0.45 eV and switchable p‐n electrical conduction. Pv‐Mn₂O₃, comprising nontoxic and inexpensive elements, is much stronger than traditional semiconductors, and promises applications in the semiconductor industry, e.g., in IR detectors and other devices. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2t46k0z3" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>