Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature. (28th October 2014)

• Record Type: Journal Article
• Authors: Guo, Nan; Hu, Weida; Liao, Lei; Yip, SenPo; Ho, Johnny C.; Miao, Jinshui; Zhang, Zhi; Zou, Jin; Jiang, Tao; Wu, Shiwei; Chen, Xiaoshuang; Lu, Wei
• Is Part Of: Advanced materials. Volume 26:Number 48(2014)
• Page Start: 8203
• Page End: 8209
• Publication Date: 2014-10-28
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201403664
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201403664-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Core/shell‐like n‐type InAs nanowire phototransistors</bold> based on majority‐carrier‐dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self‐assembled near‐surface photogating layer, forming a built‐in electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2t46k63d" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>