A Hard Oxide Semiconductor with A Direct and Narrow Bandgap and Switchable p–n Electrical Conduction. (27th October 2014)

• Record Type: Journal Article
• Authors: Ovsyannikov, Sergey V.; Karkin, Alexander E.; Morozova, Natalia V.; Shchennikov, Vladimir V.; Bykova, Elena; Abakumov, Artem M.; Tsirlin, Alexander A.; Glazyrin, Konstantin V.; Dubrovinsky, Leonid
• Is Part Of: Advanced materials. Volume 26:Number 48(2014)
• Page Start: 8185
• Page End: 8191
• Publication Date: 2014-10-27
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201403304
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201403304-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>An oxide semiconductor (perovskite‐type Mn₂O₃)</bold> is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite‐type Mn₂O₃ described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2t46k2z4" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>