Improving Cu2ZnSnS4 (CZTS) solar cell performance by an ultrathin ZnO intermediate layer between CZTS absorber and Mo back contact. Issue 12 (21st October 2014)

• Record Type: Journal Article
• Authors: Liu, Xiaolei; Cui, Hongtao; Li, Wei; Song, Ning; Liu, Fangyang; Conibeer, Gavin; Hao, Xiaojing
• Is Part Of: Physica status solidi. Volume 8:Issue 12(2014:Dec.)
• Page Start: 966
• Page End: 970
• Publication Date: 2014-10-21
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409052
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201409052-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The effects of an ultrathin ZnO intermediate layer deposited at the CZTS/Mo interface on CZTS solar cell performance have been investigated in this work. The ZnO layer inhibits the generation of MoS₂ layer and the formation of voids in the CZTS absorber. Consequently, the incorporation of this layer reduces the series resistance and increases the shunt resistance, which boosts photovoltaic conversion efficiency from 1.13% to 4.3%. (© 2014 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>