Deposition of semiconducting single‐walled carbon nanotubes using light‐assisted dielectrophoresis. Issue 12 (2nd September 2014)

• Record Type: Journal Article
• Authors: Li, Wenshan; Pyatkov, Feliks; Dehm, Simone; Flavel, Benjamin S.; Krupke, Ralph
• Is Part Of: Physica status solidi. Volume 251:Issue 12(2014:Dec.)
• Page Start: 2475
• Page End: 2479
• Publication Date: 2014-09-02
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201451280
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201451280-sec-0001" sec-type="section"> <p>Dielectrophoresis (DEP) is an established method for the integration of solution‐processed single‐walled carbon nanotubes into nanoscale device structures. However, this method is less effective for small‐diameter semiconducting nanotubes and leads to an enrichment of metallic tubes in multi‐tube devices. In this work, we present the first results of a novel light‐assisted DEP technique, which enhances the deposition of (6, 5) semiconducting carbon nanotubes. Transistors fabricated with this technique show higher on/off ratios compared to transistors that were fabricated by conventional DEP. We explain this effect by an enhanced polarizability of the irradiated semiconducting nanotubes and discuss spontaneous and field‐driven exciton dissociation as the underlying mechanism. Strategies to further improve the effect are also proposed.</p> </sec> </abstract>