Effect of Ferroelectric Polarization on Ionic Transport and Resistance Degradation in BaTiO3 by Phase‐Field Approach. Issue 11 (24th July 2014)

• Record Type: Journal Article
• Authors: Cao, Ye; Shen, Jie; Randall, Clive; Chen, Long‐Qing; Johnson, David
• Is Part Of: Journal of the American Ceramic Society. Volume 97:Issue 11(2014)
• Page Start: 3568
• Page End: 3575
• Publication Date: 2014-07-24
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.13162
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" id="jace13162-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>We proposed a model to study the resistance degradation behavior of ferroelectric oxides in the presence of ferroelectric spontaneous polarization by combining the phase‐field model of ferroelectric domains and nonlinear diffusion equations for ionic/electronic transport. We took into account the nonperiodic boundary conditions for solving the electrochemical transport equations and Ginzburg–Landau equations using the Chebyshev collocation algorithm. We considered a single domain structure relative to a thin film BaTiO₃ single crystal orientated to the normal of the electrode plates (Ni) in a single parallel plate capacitor configuration. The capacitor was subjected to a dc bias of 0.5 V either along the polarization direction or opposite to the polarization direction at 25°C. It is shown that the polarization bound charges at the metal/ferroelectric interface play an important role in charge carrier transport and leakage current evolution in BaTiO₃ capacitor.</p> </abstract>