The Effect of PbS on Crystallization Behavior of GeS2‐Ga2S3‐Based Chalcogenide Glasses. Issue 11 (4th August 2014)

• Record Type: Journal Article
• Authors: Qu, Guoshun; Zhai, Sumin; Xu, Yinsheng; Dai, Shixun; Tao, Haizheng; Gu, Shaoxuan; Lin, Changgui; Lucas, P.
• Is Part Of: Journal of the American Ceramic Society. Volume 97:Issue 11(2014)
• Page Start: 3469
• Page End: 3474
• Publication Date: 2014-08-04
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.13166
• Languages: English
• ISSNs: 0002-7820

Abstract

<abstract abstract-type="main" xml:lang="en" id="jace13166-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Glass‐ceramics of PbS‐doped 80GeS₂·20Ga₂S₃ were fabricated by heat treatments of base glasses at <italic>T</italic>_g+30°C for different durations. They exhibited improved mechanical properties such as hardness and resistance to crack propagation, and meanwhile retained their excellent infrared transmission. X‐ray diffraction and Raman results indicated that Ga₂S₃ and GeS₂ crystals were precipitated inside glassy matrix. The crystallization kinetics of base glass was investigated using differential scanning calorimetry under nonisothermal conditions. Compared with the previous work concerning on 80GeS₂·20Ga₂S₃ glass, there exists some different features of crystallization behavior. Such variation is discussed and correlated with the network structure and crystallization kinetics in this glass system.</p> </abstract>