Temperature dependent relocation of the cesium primary ion beam during SIMS analysis. (7th August 2014)

• Record Type: Journal Article
• Authors: Giordani, Andrew; Tuggle, Jay; Winkler, Christopher; Hunter, Jerry; Lee, Yeonhee; Moon, DaeWon; Kang, Hee Jae; Kim, Kyung Joong; Lee, Tae Geol; Lee, Jae Cheol; Yi, Keewook; Hong, Tae Eun
• Is Part Of: Surface and interface analysis. Volume 46:Number 1(2014:Jan.)
• Page Start: 31
• Page End: 34
• Publication Date: 2014-08-07
• Subjects: Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.5652
• Languages: English
• ISSNs: 0142-2421

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The ability to control and accurately measure the cesium concentration, [Cs], is a critical step toward understanding the role of Cs in the SIMS MCs⁺ technique. We have developed a method to alter the instantaneous [Cs] by using electron gun heating (<italic>in situ</italic>) during Cs bombardment and found that heating (<italic>ex situ</italic>) during the X‐ray photoelectron spectroscopy (XPS) analysis provides a qualitative depth distribution of the implanted Cs. The effectiveness of <italic>in situ</italic> and <italic>ex situ</italic> heating is explored on (100) silicon and (100) indium arsenide. Cs build‐up curves are studied to determine if <italic>in situ</italic> heating produces secondary ion yields that are favorable for the MCs⁺ technique. In addition to XPS, scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) and scanning transmission electron microscopy/energy dispersive spectroscopy (STEM/EDS) are utilized to measure [Cs]. The goal of this work is to improve the quantification of the MCs⁺ technique used in SIMS by understanding the material dependent behavior (incorporation and retention) of Cs and how it affects the MCs⁺ analysis. Copyright © 2014 John Wiley &amp; Sons, Ltd.</p> </abstract>