Back side SIMS analysis. (21st March 2014)

• Record Type: Journal Article
• Authors: Stevie, F. A.; Garcia, R.; Richardson, C.; Zhou, C.; Lee, Yeonhee; Moon, DaeWon; Kang, Hee Jae; Kim, Kyung Joong; Lee, Tae Geol; Lee, Jae Cheol; Yi, Keewook; Hong, Tae Eun
• Is Part Of: Surface and interface analysis. Volume 46:Number 1(2014:Jan.)
• Page Start: 241
• Page End: 243
• Publication Date: 2014-03-21
• Subjects: Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.5470
• Languages: English
• ISSNs: 0142-2421

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Depth profiling SIMS analysis to determine diffusion of an element from a surface layer into a substrate or penetration of a species through a barrier layer can be very difficult to achieve because one cannot readily detect a trace amount of an element after depth profiling through a matrix level of the same element. Removal of the substrate and analysis from the back of the sample has provided a solution to this problem. Substrate removal methods have been either mechanical polish followed by a chemical etch or mechanical polish alone. The latter method has provided successful results for a wide range of studies including penetration of Cu though a barrier material, diffusion from high‐k dielectric layers, and site specific analysis on a product wafer. In order to make the polishing method more routine and reduce the time required, substrate removal was investigated with use of a milling machine designed to de‐process packaged semiconductor devices. Initial work on an Si substrate shows residual Si less than 100 nm could be obtained in a region that was subsequently analyzed with good depth resolution in a SIMS depth profile. Mesa sample preparation with this instrument was also demonstrated. Copyright © 2014 John Wiley &amp; Sons, Ltd.</p> </abstract>