Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior. Issue 10 (11th August 2014)

• Record Type: Journal Article
• Authors: Park, Min Hyuk; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Hwang, Cheol Seong
• Is Part Of: Physica status solidi. Volume 8:Issue 10(2014:Oct.)
• Page Start: 857
• Page End: 861
• Publication Date: 2014-08-11
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409349
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201409349-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>With increasing annealing temperature (<italic>T</italic>_anneal), the magnitude of the electric fields for the antiferroelectric‐to‐ferro‐electric (<italic>E</italic>_AF) and ferroelectric‐to‐antiferroelectric (<italic>E</italic>_FA) transition of a 9.2 nm thick Hf_0.3Zr_0.7O₂ film decreased. The energy storage densities of the Hf_0.3Zr_0.7O₂ films crystallized at 400 °C, 500 °C, and 600 °C were as large as 42.2 J/cm³, 40.4 J/cm³, and 28.3 J/cm³, respectively, at the electric field of 4.35 MV/cm. The maximum dielectric constant of the Hf_0.3Zr_0.7O₂ film crystallized at 600 °C was the largest (∼46) as it had the smallest <italic>E</italic>_AF and <italic>E</italic>_FA, whereas the leakage current density of the film crystallized at 400 °C was the smallest. The 400 °C of <italic>T</italic>_anneal was the optimum condition for energy storage application. (© 2014 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>