Photoluminescence properties of Ce3+ ions in Ce‐doped SiO1.5 thin films containing Si nanocrystals. Issue 11 (25th July 2014)

• Record Type: Journal Article
• Authors: Weimmerskirch‐Aubatin, J.; Stoffel, M.; Devaux, X.; Bouché, A.; Vergnat, M.; Rinnert, H.; Pizzini, Sergio; Kissinger, Gudrun
• Is Part Of: Physica status solidi. Volume 11:Issue 11/12(2014)
• Page Start: 1630
• Page End: 1633
• Publication Date: 2014-07-25
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400042
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>We investigate the luminescence properties of Ce³⁺ ions in Ce‐doped SiO_1.5 thin films containing Si nanocrystals (Si‐ncs) by means of steady‐state photoluminescence (PL), time‐resolved PL and PL excitation spectroscopy. Strong Ce‐related blue luminescence is observed with the naked eye at room temperature. The Ce‐related lumines‐cence is found to ncrease with the Ce content in the films while simultaneously, the Si‐nc‐related luminescence decreases. Moreover, the decay time of the Si‐nc related luminescence decreases for increasing Ce concentrations thus suggesting a possible indirect excitation of the Ce³⁺ ions via Si‐ncs. However, PL excitation measurements show that Ce3+ ions are mainly directly excited with only a negligible influence of the Si‐ncs. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>