Resistive switching in unstructured, polycrystalline BiFeO3 thin films with downscaled electrodes. Issue 11 (16th July 2014)

• Record Type: Journal Article
• Authors: Jin, L.; Shuai, Y.; Ou, X.; Siles, P. F.; Zeng, H. Z.; You, T.; Du, N.; Bürger, D.; Skorupa, I.; Zhou, S.; Luo, W. B.; Wu, C. G.; Zhang, W. L.; Mikolajick, T.; Schmidt, O. G.; Schmidt, H.
• Is Part Of: Physica status solidi. Volume 211:Issue 11(2014:Nov.)
• Page Start: 2563
• Page End: 2568
• Publication Date: 2014-07-16
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201431298
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201431298-sec-0001" sec-type="section"> <p>Resistive switching (RS) has been investigated in unstructured, polycrystalline BiFeO₃ thin films with an emphasis on the possibility to downscale the top electrode size. Reproducible RS can be shown for large‐scale top and bottom electrodes. However, distinguishable RS is observed when the top electrode is downscaled to the grain size. The microscopic conduction is found to take place within grains. We demonstrate the recovery of homogeneous RS in unstructured, polycrystalline BiFeO₃ with downscaled electrodes and reduced conductive unit size by decreasing the BiFeO₃ film thickness.</p> </sec> </abstract>