An alternative method to extract the parasitic capacitances of GaN FETs. Issue 1 (18th November 2014)

• Record Type: Journal Article
• Authors: Loo‐Yau, J. R.; Tapia‐Sánchez, I.; Moreno, P.
• Is Part Of: Microwave and optical technology letters. Volume 57:Issue 1(2015:Jan.)
• Page Start: 223
• Page End: 225
• Publication Date: 2014-11-18
• Subjects: Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.28816
• Languages: English
• ISSNs: 0895-2477

Abstract

<abstract abstract-type="main"> <title>ABSTRACT</title> <p>This work presents a method to determine the parasitic capacitances of GaN FETs, especially the C_pd. The proposed method is based on an idea used for GaAs FET that assumes that C_pd is directly proportional to C_ds by a factor of 0.25. The contribution of this work lies in the adaptation of this technique to be suitable for GaN FETs by proposing a methodology to accurately compute the proportionality factor. The proposed procedure is based on the ratio of Im(Y₁₁+Y₁₂) to Im(Y₂₂+Y₁₂), which is related to the asymmetry of the depletion region of the GaN FET under pinched‐off Cold‐FET condition. To validate the proposed method, several GaN FETs were modeled using the extracted capacitances and the simulations results have a high correlation with experimental data. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:223–225, 2015</p> </abstract>