Highly Uniform Trilayer Molybdenum Disulfide for Wafer‐Scale Device Fabrication. (19th August 2014)

• Record Type: Journal Article
• Authors: Tarasov, Alexey; Campbell, Philip M.; Tsai, Meng‐Yen; Hesabi, Zohreh R.; Feirer, Janine; Graham, Samuel; Ready, W. Jud; Vogel, Eric M.
• Is Part Of: Advanced functional materials. Volume 24:Number 40(2014)
• Page Start: 6389
• Page End: 6400
• Publication Date: 2014-08-19
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201401389
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Molybdenum disulfide (MoS<sub>2</sub>) is a layered semiconducting material with a tunable bandgap that is promising for the next generation nanoelectronics as a substitute for graphene or silicon. Despite recent progress, the synthesis of high‐quality and highly uniform MoS<sub>2</sub> on a large scale is still a challenge. In this work, a temperature‐dependent synthesis study of large‐area MoS<sub>2</sub> by direct sulfurization of evaporated Mo thin films on SiO<sub>2</sub> is presented. A variety of physical characterization techniques is employed to investigate the structural quality of the material. The film quality is shown to be similar to geological MoS<sub>2</sub>, if synthesized at sufficiently high temperatures (1050 °C). In addition, a highly uniform growth of trilayer MoS<sub>2</sub> with an unprecedented uniformity of ±0.07 nm over a large area (> 10 cm<sup>2</sup>) is achieved. These films are used to fabricate field‐effect transistors following a straightforward wafer‐scale UV lithography process. The intrinsic field‐effect mobility is estimated to be about <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgh2ch0pnf1" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math display="inline" altimg="urn:x-wiley:dummy:adfm201401389:equation:adfm201401389-math-0003" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>6.5</mml:mn><mml:mo>±</mml:mo><mml:mn>2.2</mml:mn></mml:mrow></mml:math></alternatives></inline-formula> cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> and compared to previous studies. These results represent a significant step towards application of MoS<sub>2</sub> in nanoelectronics and sensing.</p> </abstract>