Spintronic Functionality of BiFeO3 Domain Walls. (23rd September 2014)

• Record Type: Journal Article
• Authors: Lee, Ji Hye; Fina, Ignasi; Marti, Xavi; Kim, Young Heon; Hesse, Dietrich; Alexe, Marin
• Is Part Of: Advanced materials. Volume 26:Number 41(2014)
• Page Start: 7078
• Page End: 7082
• Publication Date: 2014-09-23
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201402558
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201402558-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Anisotropic magnetoresistance at the BiFeO₃ domain walls</bold> has been observed thanks to the realization of micro‐devices that allow the direct magneto‐transport characterization of the domain‐walls. Anisotropic magnetoresistance of ferromagnetic metals has been a pillar in spintronic technology, and now it is evidenced at the conductive domain walls of an insulating ferroelectric material, which implies that domain walls become an electrically tunable nanospintronic object. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2ch3c4gt" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>