An Epitaxial Ferroelectric Tunnel Junction on Silicon. (8th September 2014)

• Record Type: Journal Article
• Authors: Li, Zhipeng; Guo, Xiao; Lu, Hui‐Bin; Zhang, Zaoli; Song, Dongsheng; Cheng, Shaobo; Bosman, Michel; Zhu, Jing; Dong, Zhili; Zhu, Weiguang
• Is Part Of: Advanced materials. Volume 26:Number 42(2014)
• Page Start: 7185
• Page End: 7189
• Publication Date: 2014-09-08
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201402527
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201402527-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Epitaxially grown functional perovskites</bold> on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO₃ barrier layer are demonstrated. The polarization‐switching‐induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non‐volatile memory cells on a silicon platform. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2cn0xjm8" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>