UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications. Issue 8 (27th August 2014) - Hwang, Jaeeun
Abstract Solution‐based oxide gate dielectric layers are prepared from metal nitrates using UV‐assisted annealing at 150 °C. The leakage current densities of ZrO2 and Al2O3 dielectrics are less than about 10‐9 A/cm2 at 1 MV/cm and comparable to those formed by annealing at higher temperatures. High dielectric constants and the low leakage current behavior of the dielectric layers provide excellent ZnO TFT performance, with a field effect mobility of 1.37 cm2/V.s and an off‐current density of 10‐12 A/cm2. This low fabrication temperature process is compatible with future plastic electronics technology.