UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications. Issue 8 (27th August 2014)

• Record Type: Journal Article
• Authors: Hwang, Jaeeun; Lee, Kyungmin; Jeong, Yesul; Lee, Yong Uk; Pearson, Christopher; Petty, Michael C.; Kim, Hongdoo
• Is Part Of: Advanced materials interfaces. Volume 1:Issue 8(2014)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2014-08-27
• Subjects: Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201400206
• Languages: English
• ISSNs: 2196-7350

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="admi201400206-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Solution‐based oxide gate dielectric layers</bold> are prepared from metal nitrates using UV‐assisted annealing at 150 °C. The leakage current densities of ZrO₂ and Al₂O₃ dielectrics are less than about 10^‐9 A/cm² at 1 MV/cm and comparable to those formed by annealing at higher temperatures. High dielectric constants and the low leakage current behavior of the dielectric layers provide excellent ZnO TFT performance, with a field effect mobility of 1.37 cm²/V.s and an off‐current density of 10^‐12 A/cm². This low fabrication temperature process is compatible with future plastic electronics technology. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2cn28f7c" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>