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ChemInform Abstract: Doping Effects of Group‐IIIA Elements on Physical Properties of ZnMgXO (X: Al, Ga, In, Tl) Transparent Conducting Oxide Films Prepared by RF Magnetron Sputtering. Issue 48 (2nd December 2014)
Record Type:
Journal Article
Title:
ChemInform Abstract: Doping Effects of Group‐IIIA Elements on Physical Properties of ZnMgXO (X: Al, Ga, In, Tl) Transparent Conducting Oxide Films Prepared by RF Magnetron Sputtering. Issue 48 (2nd December 2014)
Main Title:
ChemInform Abstract: Doping Effects of Group‐IIIA Elements on Physical Properties of ZnMgXO (X: Al, Ga, In, Tl) Transparent Conducting Oxide Films Prepared by RF Magnetron Sputtering.
<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Zn<sub>0.88</sub>Mg<sub>0.1</sub>M<sub>0.02</sub>O (M: Al, Ga, In, Tl) films are grown on quartz by radio‐frequency magnetron sputtering using ceramic targets prepared by cold isostatic pressing and sintering of the respective metal oxide powders (950 °C, 6 h).</p> </abstract>